Improved Light effect transistor (LET)
- 详细技术说明
- Application No.: 15/658,891The present disclosure relates generally to electronic and optoelectronic devices, and more particularly, to a particular type of photoconductive device, referred to as a light-effect transistor (LET), and to methods for using a LET to perform optical gating and optical analog operations.
- *Abstract
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Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.
- 国家/地区
- 美国
