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A Surfactant Free Method For Preparing Two-Dimensional Indium Selenide

技术优势
• Large-volume processing method • Produces materials with minimal defects and residues
详细技术说明
A liquid phase exfoliation (LPE) method for preparing two-dimensional indium selenide. #semiconductor #processing #materials #manufacturing
*Abstract

BACKGROUND 

Two-dimensional indium selenide (InSe) is an emerging 2D semiconductor due to its exceptional optical and electronic properties. However, chemical degradation of thin InSe nanosheets in ambient conditions presents processing challenges. Several approaches have been developed to mitigate chemical degradation including the isolation of InSe nanosheets via micromechanical exfoliation in an inert atmosphere and the production of 2D InSe nanosheets using pulsed laser deposition or chemical synthesis from solution. However, these techniques have limited scalability for industrial application or suboptimal quality of the resulting 2D InSe nanosheets. Thus, there remains an unmet need for the development of new treatments in the production of 2D InSe nanosheets. 

ABSTRACT 

Researchers at Northwestern University have developed a liquid phase exfoliation method for preparing two-dimensional indium selenide, which has potential applications in electronic devices, energy storage, and catalysis. Traditionally, this material is prepared by mechanical exfoliation, which is not a scalable method and thus limits its technological potential. This invention provides an industrially scalable, solution-based route for preparing stable and chemically pristine reactive nanomaterials. Using a deoxygenated, surfactant-free, low boiling point co-solvent system based on an ethanol and water mixture, the resulting LPE InSe nanosheets possess optoelectronic properties that are comparable to micromechanically exfoliated InSe. Furthermore, the indium selenide nanosheets prepared from this method show ultra-high performance, resulting in a photodetector that exceeds other 2D materials by 100-fold. Moreover, the high-throughput production method enables them to be scaled to large-area device arrays. 

*Publications
None
国家/地区
美国

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