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Wafer-scale Monolayer Films of Semiconducting Metal Dichalcogenides for High-performance Electronics

详细技术说明
A large scalegrowth technique was invented for producing high quality, continuous monolayer filmsfrom transition metal dichalcogenides (TMDs). The produced TMD films featuresunprecedented uniform structural and electrical properties, an important steptowards development of atomically thin integrated circuitry.
*Abstract

Transitionmetal dichalcogenides (TMDs) are atomically-thin semiconductors with promisingproperties to enable flexible electronics, display technology, orphotovoltaics. Molybdenum disulfide (MoS2)and tungsten disulfide (WS2) are two types of TMDs that haverecently emerged as ideal material platforms for ultrathin circuitry thanks totheir chemical and physical stability and high electrical carrier mobility.

 

The fullrealization of these exciting potentials requires a large scale growth methodfor producing high quality, continuous monolayer TMD films with uniformstructural and electrical properties. Most growth methods previously reported,however, have demonstrated only limited structural uniformity.

  

Thisinvention is directed to a process for the 4-inch wafer-scale growth ofcontinuous monolayer TMD films using metal-organic chemical vapor deposition.The resulting monolayer films show excellent structural and electricaluniformity over the whole wafer, with very high electron mobility at roomtemperature, regardless of the channel length and device location. These films enablethe batch fabrication of monolayer TMD field effect transistors (e.g., from MoS2)with a high 99% yield, which display spatially-uniform n-type transistoroperation with a high on/off ratio. Furthermore, the multi-level growth and fabricationof vertically-stacked monolayer MoS2 films and devices has beensuccessfully demonstrated, which could enable the development of novelthree-dimensional circuitry.

 

Potential Applications

  • ultraflat,3-dimensional (3D) electronics
  • flexible,transparent electronics

  

Advantages

  • Practicaland scalable method for coating wafer-scale areas with TMD thin films
  • Achievesexcellent structural and electronic film uniformity
*Licensing
Martin Teschlmt439@cornell.edu(607) 254-4454
其他

Kang, K.et al., High-mobility three-atom-thick semiconducting films with wafer-scalehomogeneity, Nature 520, 656–660 (2015)
国家/地区
美国

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