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Waveguide-integrated Photodiode in Deposited Silicon

详细技术说明
This invention is a photodiode in polycrystalline silicon (polysilicon), a standard deposited material that can be integrated in the CMOS material stack.
*Abstract

Silicon photonic circuits can provide high-bandwidth, low-power data transmission for many computing and communication applications. This invention is a photodiode in polycrystalline silicon (polysilicon), a standard deposited material that can be integrated in the CMOS material stack. The use of deposited silicon-based materials can enable new flexibility in system architecture and chip fabrication, for instance by eliminating the need for expensive silicon-on-insulator wafers, and the additional complex and costly processing for integrating germanium on silicon.

The Cornell photodetector can be coupled to a waveguide made from crystalline silicon, amorphous silicon, polysilicon, silicon nitride, silicon oxynitride, polymers, or other materials. The inventors demonstrated photodiodes in deposited polysilicon at 1550 nm wavelength with 0.15 A/W responsivity, 40 nA dark current, and 2.5 Gbps operation. They propose an interconnect scheme with modulators and photodetectors in the same deposited material.

Potential Commercial Applications:

  • Long-range telecommunication networks
  • Short-range computing, including chip-to-chip and on-chip optical interconnects
  • Electronic readout for lab-on-a-chip sensing and spectroscopy

Advantages:

  • CMOS compatibility
  • Less manufacturing complexity
  • Drive/receive circuit integration
  • Increase in yield
*Licensing
Patrick Govangpjg26@cornell.edu(607) 254-2330
其他
国家/地区
美国

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