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High Efficiency LED with Optimized Photonic Crystal Extractor

技术优势: Increased light extraction efficiency Lower manufacturing costs

技术应用: LED manufacturing This technology is available for licensing.

详细技术说明: Researchers at the University of California, Santa Barbara have developed new LED structures that provide increased light extraction efficiency while retaining a planar structure. The new LED structures provide direct emissions outside the structure and, in addition, convert guided light into extracted light using a diffraction grating. This grating may be placed outside the current-injected region of the active layer, or current may be injected into the grating region. Moreover, the diffraction grating is comprised of an array of holes, which may be pierced into the emitting species of the active layer, or only in other layers of the LED. The diffraction grating is a two-dimensional photonic crystal extractor, and the present invention provides improvements over previous implementations of photonic crystal extractors. The efficiency of the new LED structure is due to the fact that guided light is only (or mostly) emitted into guided modes that will be interacting with the photonic crystal, so that the many guided modes that are usually lost are diffracted outside the device. This is especially important in the case of an LED that supports numerous guided modes, such as a nitride-materials-based LED (which usually has to be several microns thick due to material growth considerations). The new LED structure retains a planar single layer structure making it easily manufacturable at low cost.

*Abstract: New LED structures that provide increased light extraction efficiency while retaining a planar structure.

*Applications

LED manufacturing

*IP Issue Date: Sep 1, 2009

*Principal Investigation: Name: Aurelien David
Department:

Name: Steven DenBaars
Department:

Name: Claude Weisbuch
Department:

附加资料: Patent Number: US7582910B2
Application Number: US200567956A
Inventor: David, Aurelien J. F. | Weisbuch, Claude C. A. | DenBaars, Steven P.
Priority Date: 28 Feb 2005
Priority Number: US7582910B2
Application Date: 28 Feb 2005
Publication Date: 1 Sep 2009
IPC Current: H01L002715 | H01L003112 | H01L003320
US Class: 257086 | 257094 | 257098 | 257103
Assignee Applicant: The Regents of the University of California
Title: High efficiency light emitting diode (LED) with optimized photonic crystal extractor
Usefulness: High efficiency light emitting diode (LED) with optimized photonic crystal extractor
Summary: for use in liquid crystal display (LCD).
Novelty: Light emitting diode for use in liquid crystal display, has several optical confinement layers with multiple diffraction grating having photonic crystals

主要类别: 光学

细分类别: 发光二极管/有机发光二极管

申请号码: 7582910

其他

Background

As semiconductor materials have improved, the efficiency of semiconductor devices has also improved and new wavelength ranges have been used. Gallium nitride (GaN) based light emitters are probably the most promising for a variety of applications. GaN provides efficient illumination in the ultraviolet (UV) to amber spectrum, when alloyed with varying concentrates of indium (In), for example. Unfortunately, most of the light emitted within a semiconductor LED material is lost due to total internal reflection at the semiconductor-air interface. Typical semiconductor materials have a high index of refraction, and thus, according to Snell's law, most of the light will remain trapped in the materials, thereby degrading efficiency. By choosing a suitable geometry for the LED, a higher extraction efficiency can be achieved.

Additional Technologies by these Inventors

Tech ID/UC Case

22789/2005-198-0

Related Cases

2005-198-0

国家/地区: 美国

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