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Method for Growing High-Quality Group III-Nitride Crystals

技术优势

Allows the production of high-quality group III-nitride crystals Impurities are prevented from being incorporated into grown crystals Lower production costs (source materials and nutrients can be recycled)

技术应用

Production of group III-nitride crystals  This technology is available for a non-exclusive license.

详细技术说明

Researchers at the University of California, Santa Barbara have developed a novel method for growing group Ill-nitride crystals in supercritical ammonia. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient and a seed crystal. The supercritical ammonia provides for high solubility of the source materials and high transport speed of dissolved precursors. This method uses an internal chamber equipped with a pressure releasing device that enables the safe filling of ammonia and an exact balancing of the pressure inside and outside the internal chamber.  The present invention suppresses the generation of particles from the source material and prevents the adhesion of the particles from the source material on the seed crystals. Thus, this invention produces high quality group III-nitride crystals and reduces production costs, since the source materials and nutrients are recyclable.

*Abstract

A novel method for growing group Ill-nitride crystals in supercritical ammonia.

*IP Issue Date

Apr 29, 2014

*Principal Investigation

Name: Kenji Fujito

Department:

Name: Tadao Hashimoto

Department:

Name: Shuji Nakamura

Department:

附加资料

Patent Number: US8709371B2
Application Number: US2007921396A
Inventor: Fujito, Kenji | Hashimoto, Tadao | Nakamura, Shuji
Priority Date: 8 Jul 2005
Priority Number: US8709371B2
Application Date: 30 Nov 2007
Publication Date: 29 Apr 2014
IPC Current: C01B002106 | C30B002300 | C30B002500 | C30B002812 | C30B002814
US Class: 423409 | 117084
Assignee Applicant: The Regents of the University of California | Japan Science and Technology Agency,Kawaguchi, Saitama Prefecture
Title: Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
Usefulness: Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
Summary: For growing group III-nitride (e.g. gallium nitride) crystals (claimed).
Novelty: Growing group III-nitride e.g. gallium nitride crystals involves raising temperature so that convection of supercritical ammonia deposits only transferred source materials of specific grain size on seed crystals

主要类别

化工/材料

细分类别

化工/材料应用

申请号码

8709371

其他

Background

The growth of a bulk crystal of a group III-nitride (such as GaN, AlN, and LiN) presents some difficulties, since group III-nitrides have a high melting point and high nitrogen vapor pressure at high temperature. Some methods, such as high-pressure high-temperature synthesis and sodium flux, have been used to obtain bulk group III-nitride crystals. However, the crystal shape obtained by these methods is a thin platelet because these methods are based on a melt of group III metal, in which nitrogen has very low solubility and a low diffusion coefficient.

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• Growth of Planar Semi-Polar Gallium Nitride
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• III-Nitride Tunnel Junction with Modified Interface
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• Contact Architectures for Tunnel Junction Devices
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
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• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21909/2005-339-0

Related Cases

2005-339-0

国家/地区

美国