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Loss Modulated Silicon Evanescent Lasers

技术优势

Potential increases in modulation signal well over 100 GHz Better optical properties Faster modulation Minimize pattern effects or chirp in the laser

技术应用

Hybrid silicon laser High performance semiconductor lasers Optical amplifiers Modulators Photodetectors     This technology is available for licensing.

详细技术说明

Researchers at the University of California, Santa Barbara have developed two novel alternative methods for modulating semiconductor lasers that enable much higher frequency modulation. Rather than modulating the incoming current to the laser, the researchers propose modulating the loss in the cavity. This results in much faster modulation. Alternatively, in a ring laser significant impacts on modulation can be made by adding a second arm. By modulating the phase of light in this section, the light in the ring can add or subtract from the light in the separate arm. Further, it may be possible to modulate both the gain and the loss using either of these techniques to minimize pattern effects or minimize chirp in the laser.

*Abstract

Two novel alternative methods for modulating semiconductor lasers that enable much higher frequency modulation.

*IP Issue Date

Apr 8, 2014

*Principal Investigation

Name: John Bowers

Department:

Name: Daoxin Dai

Department:

附加资料

Patent Number: US20120002694A1
Application Number: US2010827776A
Inventor: Bowers, John E. | Dai, Daoxin
Priority Date: 30 Jun 2010
Priority Number: US20120002694A1
Application Date: 30 Jun 2010
Publication Date: 5 Jan 2012
IPC Current: H01S0005323 | H01L002102
US Class: 37204501 | 257E21002 | 438031
Assignee Applicant: The Regents of the University of California
Title: LOSS MODULATED SILICON EVANESCENT LASERS
Usefulness: LOSS MODULATED SILICON EVANESCENT LASERS
Novelty: Loss-modulated semiconductor laser device e.g. hybrid laser has semiconductor on insulator structure that is resident on substrate

主要类别

光学

细分类别

激光

申请号码

8693509

其他

Background

Semiconductor lasers are usually modulated by changing the current to the laser, which changes the gain and causes the light output to change. The bandwidth of this is limited by the relaxation oscillation frequency and is typically 10 to 40 GHz.

Related Materials

"High speed modulation of hybrid silicon evanescent lasers"

(PowerPoint Presentation) - Daoxin Dai, AW Fang and John E Bowers

Additional Technologies by these Inventors

• Fused Vertical Couplers
• Ring Resonator-Based Optical Isolator and Circulator
• Integrated Dielectric Waveguide and Semiconductor Layer
• Integrated Bidirectional Optical Amplifier (BOA) for Optical Interconnects
• Integrated Reconfigurable Circulator
• Advanced Tunable Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers
• Epitaxial Laser Integration on Silicon Based Substrates
• Orthogonal Mode Laser Gyro
• Unipolar Light Emitting Devices On Silicon Based Substrates
• A Hybrid Silicon Laser-Quantum Well Intermixing Wafer Bonded Integration Platform
• Quantum Dot Photonic Integrated Circuits
• Misfit Dislocation Free Quantum Dot Lasers

Tech ID/UC Case

18965/2009-428-0

Related Cases

2009-428-0, 2009-427-1, 2009-537-1

国家/地区

美国