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Nonpolar (Al, B, In, Ga)N Quantum Well Design

技术优势

Increased quantum well width in order to optimize emission in nonpolar nitride-based devices.

技术应用

LED fabrication This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

详细技术说明

Scientists at the University of California have developed a novel approach to designing high-performance nonpolar quantum wells. This technique can be used to grow higher-emission structures by increasing the quantum well width.

*Abstract

A novel approach to designing high-performance nonpolar quantum wells.

*IP Issue Date

Feb 13, 2018

*Principal Investigation

Name: Michael Craven

Department:

Name: Steven DenBaars

Department:

附加资料

Patent Number: US20070128844A1
Application Number: US2003582390A
Inventor: Craven, Michael, D. | DenBaars, Steven, P.
Priority Date: 15 Apr 2003
Priority Number: US20070128844A1
Application Date: 9 Jun 2006
Publication Date: 7 Jun 2007
IPC Current: H01L002128 | C30B002502 | C30B002504 | C30B002510 | C30B002518 | C30B002940 | C30B002960 | H01L002100 | H01L002120 | H01L0021205 | H01L002915 | H01L002920 | H01L003300
US Class: 438602 | 257E21113 | 257E21121 | 257E21126 | 257E29078
Title: Non-polar (a1,b,in,ga)n quantum wells
Usefulness: Non-polar (a1,b,in,ga)n quantum wells
Summary: For forming a nitride semiconductor device (claimed).
Novelty: Formation of nitride semiconductor device, comprises growing gallium nitride layer(s) on substrate, and growing non-polar (aluminum, boron, indium, gallium) nitride layer(s) on gallium nitride layers to form at least one quantum well

主要类别

光学

细分类别

发光二极管/有机发光二极管

申请号码

9893236

其他

Background

Nitride-based optoelectronic devices currently utilize quantum well structures that are grown in polar directions. The polarization-induced electric fields that result from this growth orientation influence the structure's energy band profiles, which then effect its optical emission characteristics. The internal electric field tilts the energy band profiles and spatially separates the charge carriers, which reduces the oscillator strength of the electron-hole pair and ultimately reduces the recombination efficiency of the quantum well. Nonpolar nitride-based semiconductor crystals do not experience the effects of polarization-induced electric fields since the energy band profiles are flat. As a result, nonpolar quantum wells should exhibit improved recombination efficiency, as well as achieve more intense emission from thicker quantum wells.

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

10277/2003-529-0

Related Cases

2003-529-0

国家/地区

美国