亚洲知识产权资讯网为知识产权业界提供一个一站式网上交易平台，协助业界发掘知识产权贸易商机，并与环球知识产权业界建立联系。无论你是知识产权拥有者正在出售您的知识产权，或是制造商需要购买技术以提高操作效能，又或是知识产权配套服务供应商，你将会从本网站发掘到有用的知识产权贸易资讯。

返回搜索结果

Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy

技术优势: Significantly improves film quality by allowing fabrication of enhanced GaN substrate layers for subsequent non-polar device fabrication; Greatly improves subsequent device performance.

技术应用: Fabrication of low-dislocation density GaN by HVPE. This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

详细技术说明: Scientists at the University of California have developed a novel method for producing low-dislocation density non-polar GaN by hydride vapor phase epitaxy (HVPE). This invention complements the method for producing thick planar films of a-plane GaN by HVPE (UC Case 2003-225) by allowing single-step fabrication of reduced defect density material.

*Abstract: A novel method for producing low-dislocation density non-polar GaN by hydride vapor phase epitaxy (HVPE).

*IP Issue Date: May 22, 2007

*Principal Investigation: Name: Michael Craven
Department:

Name: Steven DenBaars
Department:

Name: Paul Fini
Department:

Name: Benjamin Haskell
Department:

Name: Shuji Nakamura
Department:

Name: James Speck
Department:

附加资料: Patent Number: US7220658B2
Application Number: US2003537644A
Inventor: Haskell, Benjamin A | Craven, Michael D. | Fini, Paul T. | DenBaars, Steven P. | Speck, James S. | Nakamura, Shuji
Priority Date: 16 Dec 2002
Priority Number: US7220658B2
Application Date: 6 Jun 2005
Publication Date: 22 May 2007
IPC Current: H01L002120 | C30B002502 | H01L0021205
US Class: 438481 | 257E21097 | 257E21113 | 257E21131 | 257E21132
Assignee Applicant: The Regents of the University of California
Title: Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
Usefulness: Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
Summary: For manufacturing free-standing a-plane GaN film in the manufacture of laser diode, light emitting diode or transistor (claimed).
Novelty: Performing a lateral hydride vapor phase epitaxial overgrowth of planar, non-planar, a-plane gallium nitride film useful for laser diode involves masking sapphire and over growing the film under reduced pressure using hydrogen carrier gas

主要类别: 光学

细分类别: 发光二极管/有机发光二极管

申请号码: 7220658

其他

Background

Gallium nitride (GaN) and its ternary and quaternary compounds incorporating aluminum and indium (AlGaN, InGaN, AlInGaN) have proven useful in fabricating visible and ultraviolet optoelectronic devices and high-power electronic devices. GaN and its alloys are most stable in the hexagonal w'rtzite crystal structure. However, the positions of the gallium and nitrogen atoms in this structure leads to polarization of the GaN crystals along the c-axis. Virtually all GaN-based devices are grown parallel to the polar c-axis, due to the relative ease of growing planar Ga-face planes. In addition, strain at the interfaces between adjacent dissimilar layers causes piezoelectric polarization and subsequent charge separation. These polarization effects decrease the likelihood of electron and hole interaction, which is essential for the operation of light-emitting devices. As a result, eliminating these polarization effects inherent to c-axis oriented devices could greatly enhance the efficiency of GaN light-emitting devices. In addition, defect densities in directly grown GaN films are much higher that those found in more traditional III/V semiconductor systems, such as the arsenides and phosphides.

Related Technologies

Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy

Additional Technologies by these Inventors

Tech ID/UC Case

10267/2003-224-0

Related Cases

2003-224-0

国家/地区: 美国

欲了解更多信息，请点击这里