Graphene Flash Memory Device

Large memory capacity Ultra-low power consumption Compatible with state-of-the-art technology Strong immunity to short channel effects

High speed and ultra low power Flash memory for electronics

Researchers at UCLA have reported a breakthrough application for graphene: the Graphene Flash Memory. Through growing large-area graphene sheets by a simple chemical vapor deposition process and incorporating them into a floating gate MOSFET, an All Graphene Flash Memory (AGFM) has been demonstrated. The device exhibits low power consumption and more data per unit area, making AGFM a promising candidate for terabit flash memory. This, in turn, will lead to larger storage capacity and longer battery life in portable electronic devices.

Patent Number: US20130015429A1
Application Number: US13180601A
Inventor: Hong, Augustin J. | Kim, Ji-Young | Wang, Kang-Lung
Priority Date: 12 Jul 2011
Priority Number: US20130015429A1
Application Date: 12 Jul 2011
Publication Date: 17 Jan 2013
IPC Current: H01L002912
US Class: 257029 | 257E29068
Assignee Applicant: The Regents of the University of California
Title: ALL GRAPHENE FLASH MEMORY DEVICE
Usefulness: ALL GRAPHENE FLASH MEMORY DEVICE
Summary: Graphene Flash Memory (GFM) device used in mobile smart phone, portable media player, video camera, memory card, USB flash drive and gaming console.
Novelty: Graphene Flash Memory (GFM) device used in e.g. mobile smart phone, has memory cells comprising graphene channel, graphene storage layer, and graphene electrode on surface of substrate

电子

计算机，通信和消费电子产品 /小工具

8772853

Background

The increasing market demand for smaller and faster electronics has so far been meet by reducing transistor sizes. However, the trend will soon reach its physical limits. One solution is to incorporate new material such as graphene with silicon-based electronics. Due to its superb properties, graphene has received enormous attention for potential applications. However, practical graphene devices, which can be integrated into state-of-the-art technology, have not been demonstrated.

Additional Technologies by these Inventors

• Relaxed SiGe Films by Surfactant Mediation
• Vertical Gate-Depleted Single Electron Transistors
• Novel Telegraph Signal Microscope For Visualizing Single Atoms And Detecting Defects In Nanotechnology Devices
• Novel Nanomaterial-based Thermo-Photovoltaic Cells
• Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
• Vsat Structure for Nonvolatile Memory Device
• Epitaxial Growth of Single Crystalline MgO on Germanium
• A Self-Organized Critical CMOS Circuit for Computation and Information Processing
• Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
• Quasi Van Der Walls Epitaxy Of GaAs on Graphene
• Periodically Rippled Antenna
• Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive Films
• Fabrication Of 1D Sinusoidal Silicon Dioxide Substrate
• Strained Voltage-Controlled Magnetic Memory Elements and Devices

Tech ID/UC Case

22141/2011-041-0

Related Cases

2011-041-0

美国

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