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Hi-Frequency, Low Power Nanowire Nanoelectrochemical Field-Effect Transistors

技术应用

Low power, high speed transistors (cell phone, computing devices). Disruptive semiconductor technology.

详细技术说明

Engineers from UC San Diego have developed a novel nanoscale transistor structure that is based on both electrical transport and mechanical deformation in semiconductor nanowire materials and operates under a new mechanism of coupled nanoelectromechanical motion in order to achieve high switching speed as well as low standby power. Compared to traditional MEMS mechanical switches, a suspended field-effect channel does not rely on mechanical contacts with the gate electrode thus offer the advantage of high reliability. More specifically, this technology achieves a sub-threshold slope of zero by leveraging a high-mobility one dimensional nanowire platform. This device is poised to provide a building block for future computation.

*Abstract

Conventional silicon-based transistors face limitations in continued reduced dimensions in order to make electrons move faster. Meanwhile thermodynamics are dictating the amount of power consumed at the off state - by limiting the subthreshold slope of conventional transistors to be at least 60 mV/dec. Motivated by Moore’s Law, the following technology advances the effort to build low power computer logic and memory elements with even more speed.

*IP Issue Date

Oct 17, 2017

*Principal Investigation

Name: Zack Ching-Yang Chen

Department:

Name: Ji Hun Kim

Department:

Name: Soonshin Kwon

Department:

Name: Jie Xiang

Department:

申请号码

9793417

其他

State Of Development

 Technology is available for commercial development, patent protection available for US.

Related Materials

Kim JH., Chen ZC., Kwon S., Xiang J. Three-terminal nanoelectromechanical field effect transistor with abrupt subthreshold slope. Nano Lett. 2014 Mar 12;14(3):1687-91. doi: 10.1021/nl5006355. Epub 2014 Feb 28. PubMed PMID: 24568680.
Kim JH., Zack C.Y. Chen, S. Kwon and J. Xiang. Steep Subthreshold Slope Nanoelectromechanical Field-Effect Transistors with Nanowire Channel and Back Gate Geometry IEEE Explore (Figs. 3 & 4 inset above).

Tech ID/UC Case

23794/2013-239-0

Related Cases

2013-239-0

国家/地区

美国