Layout Optimization for Time-dependent Dielectric Breakdown Reliability in VLSI
At a 32nm foundry node this layout optimization technique increases chip-level lifetime by 9% to 10%. At a 20nm process and below, the effect will be even more substantial. This improved chip lifetime also means that chips can be operated at a higher supply voltage for a given lifetime if TDDB is the primary limiting factor affecting the allowable supply voltage for a given layout. Further impacts on chip layout such as printability and electromigration should also experience positive improvements.
Given here is a new post-layout optimization approach to mitigate dielectric breakdown and provide design correction prior to manufacture. Experimental results demonstrate an improved interconnect lifetime of as much as 10% following application of this optimization technique. Applying a second signal-aware chip-level TDDB reliability estimation using the stress time of interconnects based on net signals, the chip-level TDDB lifetime is approximately double that obtained by conventional analysis in which interconnects are always assumed to be under electrical stress.
9922161
Related Materials Tech ID/UC Case 23223/2013-213-0 Related Cases 2013-213-0
美国
