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Ultra-sensitive and Ultra-stable Chemical Sensor Based on Ultra-thin Organic Thin-Film Transistors

详细技术说明

Researchers at UC San Diego have developed a field-effect transistor device with a semiconducting organic thin-film as an active channel material capable of absorbing chemical vapors. The channel conductance changes in the presence of chemical vapors.  Experimental data on a number of analytes shows markedly improved sensitivity over existing devices, and a base-line drift in the presence of chemical vapors of less than 0.03 percent / hr. This sensor device can be utilized in handheld gas chromatographs, or as a household sensor for detecting gas leakage. Other applications are explosive vapor detector at airport security checkpoints and chemical warfare agent detection.

*Abstract

None

*IP Issue Date

Feb 26, 2013

*Principal Investigation

Name: Thomas Gredig

Department:

Name: Andrew Kummel

Department:

Name: William Trogler

Department:

Name: Dengliang Yang

Department:

附加资料

Patent Number: US8384409B2
Application Number: US2009597976A
Inventor: Kummel, Andrew C. | Yang, Dengliang | Trogler, William C. | Gredig, Thomas
Priority Date: 3 May 2007
Priority Number: US8384409B2
Application Date: 1 Mar 2010
Publication Date: 26 Feb 2013
IPC Current: G01R003102
US Class: 32476201 | 257040 | 32476209
Assignee Applicant: The Regents of the University of California
Title: Ultra-thin organic TFT chemical sensor, making thereof, and sensing method
Usefulness: Ultra-thin organic TFT chemical sensor, making thereof, and sensing method
Summary: Organic thin film transistor chemical sensor for sensor chip used in sensor system (claimed). Can also be used as backend detector for handheld gas chromatography, as a household or industrial sensor for detecting gas leakages, as an explosive vapor detector, as chemical warfare agent detector, and for mobile electronics applications.
Novelty: Organic thin film transistor chemical sensor for sensor chip used in sensor system, comprises substrate, gate electrode isolated from drain and source electrode by gate, and organic ultra-thin semiconductor thin film

主要类别

电子

细分类别

半导体

申请号码

8384409

其他

State Of Development

This technology is presently available for licensing.

Tech ID/UC Case

20582/2007-176-0

Related Cases

2007-176-0

国家/地区

美国