P-Type Zinc Oxide Nanowires
- 详细技术说明
- Researchers at UC San Diego have developed a method of p-doping zinc oxide nanostructures. This wideband gap semiconductor has been difficult to p-dope. The realization of p-doping enables complimentary doping and novel electronic devices, such as transistors, vertical FETs, possibly UV, visible, and white LEDs.
- *Abstract
-
None
- *IP Issue Date
- Apr 23, 2013
- *Principal Investigation
-
Name: David Aplin
Department:
Name: XinYu Bao
Department:
Name: Cesare Soci
Department:
Name: Deli Wang
Department:
Name: Bin Xiang
Department:
- 附加资料
- Patent Number: US8426224B2
Application Number: US2009520082A
Inventor: Wang, Deli | Bao, Xinyu | Xiang, Bin | Soci, Cesare | Aplin, David
Priority Date: 18 Dec 2006
Priority Number: US8426224B2
Application Date: 11 Dec 2009
Publication Date: 23 Apr 2013
IPC Current: H01L002100 | H01L003318 | H01L003324
US Class: 438022 | 136263 | 977762
Assignee Applicant: The Regents of the University of California
Title: Nanowire array-based light emitting diodes and lasers
Usefulness: Nanowire array-based light emitting diodes and lasers
Summary: A solid state lighting device, e.g. LED or laser diodes.
Novelty: Solid state lighting device comprises core material comprising p-type compound semiconductor material with nanowires, and shell material comprising n-type compound semiconductor material so that p-n junction is formed over each nanowire
- 主要类别
- 光学
- 细分类别
- 灯光
- 申请号码
- 8426224
- 其他
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Intellectual Property Info
The method is in early-stage development and is available for licensing. Patents pending.
Tech ID/UC Case
19932/2007-086-0
Related Cases
2007-086-0
- 国家/地区
- 美国
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