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Patterned, Dense, and High-Quality Single-Walled Carbon Nanotube Arrays

技术应用: This process can be widely used in the synthesis of SWNTs on various substrates including quartz wafers, silicon wafers and sapphire wafers. The resulting SWNTs can be used in high-frequency electronics and highly-integrated circuits.

详细技术说明: University researchers have developed an easy one-step approach to pattern uniform catalyst lines for the growth of dense, aligned parallel arrays of single-walled carbon nanotubes (SWNTs) on quartz wafers by using photolithography or polydimethylsiloxane (PDMS) stamp micro-contact printing (μCP). By directly doping a FeCl3/methanol solution into Shipley 1827 photoresist or polyvinylpyrrolidone (PVP), various catalyst lines can be well-patterned on a wafer scale. In addition, during the chemical vapor deposition (CVD) growth of SWNTs the polymer layers play a very important role in the formation of mono-dispersed nanoparticles. This universal and efficient method for the patterning growth of SWNTs arrays on a surface is compatible with the microelectronics industry, thus enabling of the fabrication highly integrated circuits of SWNTs.
Increasing the SWNT density enhances the electrical properties of the SWNTs by allowing for: a larger current carrying capacity and, thus, larger power capability; improved impedance matching of device to a value closer to 50Ω; and reduction in the parasitic capacitance on a per-tube basis for devices such as an rf-field effect transistor (rf-FET).

*Abstract: University researchers have developed an easy one-step approach to pattern uniform catalyst lines for the growth of dense, aligned parallel arrays of single-walled carbon nanotubes (SWNTs) on quartz wafers by using photolithography or polydimethylsiloxane (PDMS) stamp micro-contact printing (μCP).

*Principal Investigation: Name: Peter Burke
Department:

Name: Christopher Rutherglen
Department:

Name: Weiwei Zhou
Department:

附加资料: Patent Number: US20090286066A1
Application Number: US2009429595A
Inventor: Burke, Peter J. | Zhou, Weiwei | Rutherglen, Christopher M.
Priority Date: 30 Apr 2008
Priority Number: US20090286066A1
Application Date: 24 Apr 2009
Publication Date: 19 Nov 2009
IPC Current: B32B000516 | C23C001600 | G03F000720 | H05H000124
US Class: 428323 | 4270968 | 427569 | 430311 | 977750
Title: PATTERNED, DENSE AND HIGH-QUALITY SWNTS ARRAYS
Usefulness: PATTERNED, DENSE AND HIGH-QUALITY SWNTS ARRAYS
Summary: As an electronics component (claimed).
Novelty: Electronics component comprises substrate, and several single-walled carbon nanotubes uniformly formed on substrate selected from quartz wafer, silicon wafer, and sapphire wafer

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