Epitaxial Ferroelectric On Flexible Substrate
- 技术优势
- These devices significantly advance the state of the art in all the key device attributes such as switching speed, memory retention, cycling endurance and operating power. This work also provides an avenue towards combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.
- 技术应用
- 1. Computing and memory devices that can be flexed, twisted. 2. Wearable energy harvester. 3. Harvesting vibrational energy. 4. Low power micro electro-mechanical device (MEMS) on Silicon. 5. Ferroelectric devices on flexible substrate. 6 Piezoelectric devices.
- 详细技术说明
- None
- *Abstract
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Recent trends in electronics allude to a human-centric computing paradigm where high performance electronic devices will have to work on unusual surfaces with unconventional form factors. A key component of such a computer is a memory device for which Ferroelectric (FE) materials have long been considered as an ideal candidate. However, integration of the best quality FE films on flexible substrates has remained a daunting challenge, severely limiting the performance that can be achieved in these devices.
Motivated by this challenge, UC Berkeley researchers have developed a pathway for integrating epitaxial quality, FE memory devices onto flexible substrates by providing an epitaxially grown ferroelectric stack on a flexible substrate that exhibits high performance characteristics such as high polarization, fast switching and low power operation for memory devices.
- *Principal Investigation
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Name: Saidur Rahman Bakaul
Department:
Name: Sayeef Salahuddin
Department:
- 其他
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Additional Technologies by these Inventors
Tech ID/UC Case
27185/2017-069-0
Related Cases
2017-069-0
- 国家/地区
- 美国
