Methods for Fabricating Diluted Magnetic Semiconductor (DMS) Nanowires
- 技术应用
- Storage mediaSemiconductor lasersSpin-based transistor
- 详细技术说明
- None
- *Abstract
-
The miniaturization of electronic devices represents an everlasting trend for both industrial manufacture and academic research. Among many other materials, nanotubes and nanowires have been actively explored as possible building blocks for electronic devices of sub 100nm and smaller. Information technology relies heavily on charge-based information processing (microprocessors) and spin-based data storage (magnetic hard drives). The simultaneous manipulation of charge and spin in a single semiconductor medium is known as spintronics. Spintronics devices have the potential to revolutionize microelectronics, and diluted magnetic semiconductors (DMS), and in particular DMS nanowires, are the most promising candidates for such devices. Transition metal-doped GaN is suitable for many of the proposed spintronic applications because it has a ferromagnetic transition temperature higher than room temperature. Traditional approaches to making DMS nanowires have been challenged with respect to transition metal equilibrium solubility in semiconductors as well as intrinsic difficulty in nanocrystal doping. To address this these challenges, researchers at the University of California, Berkeley have developed methods for fabricating single crystalline DMS nanowires in a controlled manner. The spin-dependent electron transport from single nanowire transistors indicates the homogeneous nature of the ferromagnetic nanowires, while the gate dependent conductance and electroluminescence from nanowire-based light emitting diode structures unambiguously showed their p-type characteristics, which support the theory of hole mediated ferromagnetism.
- *Applications
-
- Storage media
- Semiconductor lasers
- Spin-based transistor
- *IP Issue Date
- Aug 23, 2011
- *Principal Investigation
-
Name: Heon Choi
Department:
Name: Rongrui He
Department:
Name: Tevye Kuykendal
Department:
Name: Sang-Kwon Lee
Department:
Name: Peter Pauzauskie
Department:
Name: Peidong Yang
Department:
Name: Yanfeng Zhang
Department:
- 申请号码
- 8003497
- 其他
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Tech ID/UC Case
17341/2004-034-0
Related Cases
2004-034-0
- 国家/地区
- 美国
