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Chemical Vapor Deposition And Selective Etching Of Silicon Carbide Films

*Principal Investigation: Name: Di Gao
Department:

Name: Roger Howe
Department:

Name: Roya Maboudian
Department:

附加资料: Patent Number: US7151277B2
Application Number: US2003613508A
Inventor: Gao, Di | Howe, Roger T. | Maboudian, Roya
Priority Date: 3 Jul 2003
Priority Number: US7151277B2
Application Date: 3 Jul 2003
Publication Date: 19 Dec 2006
IPC Current: H01L002904 | B81C000100 | H01L002100 | H01L002104 | H01L0021306 | H01L0021308 | H01L002926 | H01L002976 | H01L002982 | H01L003112 | H01L003300
US Class: 257051 | 257067 | 257072 | 257079 | 257E2106
Assignee Applicant: The Regents of the University of California
Title: Selective etching of silicon carbide films
Usefulness: Selective etching of silicon carbide films
Summary: The method is used for etching SiC used in the fabrication of micromechanical device, e.g. microelectromechanical resonator (claimed).
Novelty: Etching of silicon carbide comprises providing silicon carbide substrate, forming non-metallic mask layer, patterning mask layer to expose underlying areas of substrate, and etching underlying areas of substrate

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