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A Method For Forming Double-gate Metal Oxide Semiconductor Field Effect Transistors

技术优势
double gate structure reduces short channel effectsdouble gates provide enhanced drive current
详细技术说明
None
*Abstract

Metal Oxide Semiconductor field effect transistor (MOSFET) technology is the dominant electronic device technology in use today. Performance enhancement is achieved primarily by device scaling. However, as MOSFETs are scaled to channel lengths below 100nm, conventional devices suffer from problems such as short channel effects and reduced gate control. A double gate MOSFET device allows gate control from both sides of the channel and reduces short channel effects. In addition, when the device is turned on using both gates, two conduction layers are formed allowing for increased current flow.

Researchers at the University of California, Berkeley have developed a method for forming double-gate MOSFET and CMOS devices by a fabrication process that is compatible with conventional MOSFET fabrication. The device is fabricated on a silicon layer overlying an insulating layer with the device extending from the insulating layer as a fin. Double gates provide enhanced drive current and effectively suppress short channel effects. Two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.

*IP Issue Date
Jul 2, 2002
*Principal Investigation

Name: Jeffrey Bokor

Department:


Name: Leland Chang

Department:


Name: Yang-Kyu Choi

Department:


Name: ChenMing Hu

Department:


Name: Xuejue Huang

Department:


Name: Jakub Kedzierski

Department:


Name: Tsu Jae King Liu

Department:


Name: WEN-CHIN LEE

Department:


Name: Nick Lindert

Department:


Name: Vivek Subramanian

Department:

附加资料
Patent Number: US6041380A
Application Number: US199810084A
Inventor: LaBerge, Paul A.
Priority Date: 21 Jan 1998
Priority Number: US6041380A
Application Date: 21 Jan 1998
Publication Date: 21 Mar 2000
IPC Current: G06F001340
US Class: 710306 | 710129 | 710105 | 713501
Assignee Applicant: Micron Electronics Inc.,Nampa
Title: Method for increasing the number of devices capable of being operably connected to a host bus
Usefulness: Method for increasing the number of devices capable of being operably connected to a host bus
Summary: Host bus operating method in multi process computer system.
Novelty: Host bus operating method applied in computer system, involves transmitting signal to primary bus after one and half cycles of which address strobe is transmitted to secondary bus
主要类别
电子
细分类别
半导体
申请号码
6413802
其他

Tech ID/UC Case

16952/2000-078-0


Related Cases

2000-078-0

国家/地区
美国

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