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Proton Irradiated High Electron Mobility Transistor for More Reliable Computers and Other Electronic Devices

标题

High Electron Mobility Transistors Having Improved Reliability

详细技术说明

None

*Abstract

This irradiated high electron mobility transistor (HEMT) improves reliability and performance in electronic devices. Transistors are devices that switch and amplify electronic signals by controlling the movement of electrons. Early transistors were made from germanium - a material that does not conduct electricity effectively (i.e. an insulator). Adding impurities to germanium or other insulators - a process called doping - creates weak conductors that provide better control over the flow of electricity. These resulting semiconductors share characteristics with insulators and conductors. They donate mobile electrons (holes) to vary the amount of electrical conductivity. Unfortunately, the electrons that produce electricity regularly collide with the impurities (dopants) that are used to generate them. High mobility electrons enable more efficient movement, but not do overcome all restrictions on semiconductors. Researchers at the University of Florida have developed an irradiated HEMT with improved performance and reliability. This transistor allows for increased critical voltage, greater drain current, and reductions in reverse biased gate leakage currents. The researchers’ improved transistor could capture a significant portion of all semiconductor and circuit manufacturing revenue, which is projected to reach $78.9 billion in 2018.

Application

Proton irradiated high electron mobility transistors (HEMTs) that increase the reliability and performance of electronic devices

Advantages

• Increases transistor performance, enabling electronic devices to operate more efficiently
• Raises critical voltage, allowing high energy throughput without faulting
• Prevents current degradation, minimizing power fluctuations

Technology

HEMTs are field-effect transistors that use heterojunctions to increase performance. Heterojunctions, found where two materials with band gaps of different lengths meet, operate at higher frequencies than traditional transistors and can be fabricated from a wide variety of materials. Researchers at the University of Florida have developed proton irradiated InAlN/GaN high electron mobility transistors (HEMTs) that exhibit elevated current densities and powers compared to typical AlGaN-based HEMTs. While un-irradiated devices have critical voltages in the 45 to 55 V range during stressing, these proton-irradiated HEMTs exhibit no critical voltage up to 100 V during stressing. After stressing, they show no degradation in drain or gate current-voltage characteristics.

*IP Issue Date

Jan 12, 2016

*IP Publication Date

Aug 20, 2015

*Principal Investigation

Name: Fan Ren

Department:

Name: Jihyun Kim

Department:

Name: Stephen Pearton

Department:

申请日期

Feb 9, 2015

申请号码

9,236,443

其他

国家/地区

美国