Novel Material For Non-volatile Phase Change Memory Devices
· Fasterswitching times· Lower power requirements· Longcycle life· Potential for n-ary devices
Phase change memory devices have been proposed as the next generation technology for non-volatile memory devices. Currently flash memory devices are the dominant technology. In flash memory, data is stored using an electrical charge. Whereas in phase change memory devices, data is stored as changes in the state of the material’s property. Currently phase change memory devices are based on chalcogenide alloys, using primarily; germanium, antimony and tellurium. A thin film deposition of a chalcogenide alloy is thermally activated resulting in a change to its atomic structure from a disordered state (amorphous) to a structured state (crystalline). The resulting state change leads a change to its electrical resistance to enable the encoding of the data. Our technology proposes using a Zirconium Copper (Zr-Cu) alloy, an amorphous metal material for phase change memory devices.
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