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Functionalized graphene gate oxides for high performance field-effect transistors

总结

As the computing needs of society grow, and as electronics continue to miniaturize as a result, alternatives to traditional silicon-based electronics will become increasingly important as fundamental limits of circuit size are approached. Graphene-based materials, including carbon nanotubes, are a promising alternative to silicon-based devices as their properties can be finely tuned at the nanoscale. Graphene field-effect transistors (FET) offer exceptionally high carrier mobility and excellent 2D electrostatics, and they are gaining popularity as an alternative to silicon FETs. However, the inert nature of graphene can inhibit the deposition of various dielectric materials. This technology describes a functionalization method that can enable the deposition of a dielectric layer upon graphene and reduce or eliminate doping effects.

技术优势

Use of PVA improves substrate adhesion on grapheneMore uniform oxide coverage of the substrateGraphene enabled electronics allow for smaller circuits with lower power demand.Patent Information:Patent Issued (US 8,735,209)Tech Ventures Reference: IR M10-007

技术应用

Nanoscale electronics, including amplifiers and transistorsNew chip design for electronics, including cell phones, tablets, computers, etc.

详细技术说明

None

*Abstract

None

*Inquiry

Greg MaskelColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR

M10-007

*Principal Investigation

*Publications

Meric, I. Baklitskaya, N. Kim, P. Shepard, K.L. “RF performance of top-gated, zero-bandgap graphene field-effect transistors” Electron Devices Meeting, 2008. IEDM 2008. IEEE International

国家/地区

美国