Integrating graphene into electrical devices using a boron nitride gate
Metal oxide semiconductor (MOS) field-effect transistors (FETs) are elementary components in digital integrated circuits. With the expanding need for greater computational power driving development of modern microelectronics, FETs must be smaller, faster, and more efficient. New technologies employing a wider range of materials with unique properties are necessary since the scaling-down of silicon-based technology will encounter the limits of the atomic level. Graphene (a single layer of graphite) has been heavily investigated for over a decade as a new material for next generation FETs. This technology describes an improvement in graphene performance by introducing a boron nitride film to incorporate graphene into integrated circuits. The technology’s method of incorporating graphene into FETs can be adopted commercially and provides superior FETs compared to current silicon-dioxide supported devices.
Enables realization of more complex graphene heterostructuresCan assemble crystalline-layered materials in a controlled way using a mechanical transfer processImproved integrated circuit components allows for improved electrical switches, sensors, and detectorsPatent Information:Patent Issued (US 9,257,509)Tech Ventures Reference: IR M11-004
*Generate more effective field-effect transistors, integrated circuit, and semiconductor components by incorporating graphene in the design architecture* Method for incorporating graphene into radio frequency (RF) devices or monolithic microwave integrated circuits (MMIC) devices
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