Metamorphosis of the n-p-n Transistor Laser into a Tunnel Contact p-n-p Transistor Laser, Potentially an Improved Form of Transistor Laser
- 详细技术说明
- A semiconductor light-emitting transistor device.
- *Abstract
-
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Utility
- 国家
- United States
- 申请号码
- 7888199
- 国家/地区
- 美国
