Multistate Spin Switch Device Having a Plurality of Output Signal Levels and Fabrication Thereof
- 总结
- Researchers at Purdue University have developed a new, multistate spin device that allows for a new, efficient method of storing more memory in increasingly small spaces. This is done by creating a plurality of output signals controlled by changing input parameters. In addition, there are structural improvements, providing the increased memory storage with lesser environmental impact than other existing structures.
- 技术优势
- Increased memory storage capability Avoids the limits imposed by space constraints Less materials used in creation
- 技术应用
- Computers Mobile devices
- 详细技术说明
- Ernesto MarineroPurdue Materials EngineeringPurdue Electrical and Computer Engineering
- *Abstract
-
- *Background
- Memory storage density has been increasing over the past several decades, but advancement is reaching a point at which it is becoming physically impossible to store more memory in ultra-small spaces. This is because the current solutions are simply dimensional reduction of devices for memory storage or the utilization of 3D architectures. There are several current methods being examined at providing alternatives to this problem, including configurations based on light and quantum mechanics. These are years away from being commercially available, if they ever will be, and will be extremely expensive.
- *IP Issue Date
- None
- *IP Type
- Provisional
- *Stage of Development
- Proof of concept
- *Web Links
- Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipErnesto MarineroPurdue Materials EngineeringPurdue Electrical and Computer Engineering
- 国家
- United States
- 申请号码
- None
- 国家/地区
- 美国
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