亚洲知识产权资讯网为知识产权业界提供一个一站式网上交易平台,协助业界发掘知识产权贸易商机,并与环球知识产权业界建立联系。无论你是知识产权拥有者正在出售您的知识产权,或是制造商需要购买技术以提高操作效能,又或是知识产权配套服务供应商,你将会从本网站发掘到有用的知识产权贸易资讯。

Model Complexity Reduction Method for Multiscale Device Modeling

总结
Researchers at Purdue University have developed a new mapping scheme algorithm, which has improved accuracy and transferability of tight-bonding (TB) parameters. This algorithm has desired features of mapping from DFT to TB using alternate information from DFT, e.g., waveforms and DOS, providing a physically justified model for variation of on-site elements within environment, and provides relationships between SETB parameters. Mapping ab initio to reduce TB allows for the application of new materials outside of the normal scope of NEMO5 software.
技术优势
Completely bypasses the fitting-to-targets process by mathematically mapping from DFT to TB using alternate information (wave functions, DOS, etc.)Provides a physically justified model for variation of on-site elements with environment (strain, alloying, and interfaces to improve transferability)Provides mathematical relationships between SETB parameters to reduce the number of independent SETB parameters required to be optimized
技术应用
Software IndustryManufacturing/Machining
详细技术说明
Gerhard KlimeckNanoelectronic Modeling GroupPurdue Electrical and Computer Engineering
*Abstract

*Background
Methods of electronic and atomic structure calculations have greatly contributed to expanding the field of computational material science. Density functional theory (DFT) methods for the simulation of electronic devices have a major disadvantage in poor scaling of DFT with system size. Even order-N DFT methods scale poorly when having atom sizes greater than a few thousand atoms. A model is needed for the variation of semiempirical tight binding (SETB) parameters with changes in material environment due to alloying, strain, and confinement.
*IP Issue Date
None
*IP Type
Utility
*Stage of Development
Proof of Concept
*Web Links
Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipGerhard KlimeckNanoelectronic Modeling GroupPurdue Electrical and Computer Engineering
国家
United States
申请号码
None
国家/地区
美国

欲了解更多信息,请点击 这里
移动设备