Gate-Tunable Nanoscale Memristors
- 技术优势
- ThreeterminalsTunableSmall size
- 详细技术说明
- Novel nanoscale, three terminal memristors for new logic architectures and neuromorphic circuits #device #fabrication #electronics #nanotechnology
- *Abstract
-
Northwestern researchers have developed a new class of memristors based on grain boundaries in single-layer MoS2 devices. The resistance of grain boundaries emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ~103 and dynamic negative differential resistance. The atomically thin nature of MoS2 enables tuning of the SET voltage by a third gate terminal in a field-effect geometry, providing new functionality that can be incorporated into neurmorphic circuits and non-volatile memory devices not observed in other known memristive devices.
- *Inventors
- Mark Hersam*Lincoln LauhonTobin MarksIn Soo KimDeep JariwalaVinod Sangwan
- 国家/地区
- 美国
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