Nanoscale Self-Assembled Organic Dielectrics for Ultra-Low Voltage High-Speed Electronic Devices
- 技术优势
- • Self-assembly process • Thin-ordered nanostructures • Ultra-high capacitance/low leakage • Minimal defects
- 详细技术说明
- Self-assembling siloxane fabrication of extremely thin nanostructurally ordered, pinhole-free, ultra-high-capacitance/low leakage organic dielectrics#computer #displays #materials #semiconductor
- *Abstract
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Northwestern researchers have developed extremely thin nanostructurally ordered, pinhole-free, ultra-high-capacitance/low leakage organic dielectrics that are fabricated with self-assembling siloxane. Current organic thin-film transistors (OTFTs) are based on π-electron materials and have been extensively investigated for applications where current inorganic semiconductors cannot be employed. A variety of OTFTs employing p-type and n-type organic semiconductors have been produced; however, typical biases that are required to achieve acceptable performance with conventional dielectric materials (silicon oxide, polymers, etc.) are too high for practical use. Northwestern investigators have developed a solution phase self-assembly process that produces nanoscopic high-Ci organic dielectrics, which is critical to producing low-bias and low-leakage OTFTs. In their process, they utilize self-assembled a,ω-difunctional hydrocarbon chains (Cl3Si(CH2)8SiCl3) in conjunction with octachlorotrisiloxane capping layers, which produces an oriented, robust, multilayer, conformal polysiloxane dielectric coating with minimal defects. Using this technology, they generate devices with 2.3-5.5nm dielectric layer thickness on silicon and ITO substrates. The maximum capacitances are 385-710 nF/cm² at 10² Hz, which is significantly greater than 5-10 nF/cm² for conventional 300 nm SiO2. The OTFTs constructed with the nanoinsulators also exhibit threshold voltages 1-9% of similar devices prepared with SiO2 dielectric. These nanostructured organic dielectrics can be incorporated into large TFT structures having a variety of substrates and organic semiconductors. TFT response achieved at low operational biases offers potential for a range of low-power and high-frequency electronic applications.
- *Inventors
- Tobin Marks* Antonio Facchetti Myung-Han Yoon
- 国家/地区
- 美国
