High-Performance Nitride Transistor
- 技术优势
- -Tolerant to process variations-Excellent electron mobility at the interfaces-Ability to control the threshold voltage by thickness
- 技术应用
- High voltage power electronics, power amplification, digital electronics, hybrid vehicles, high power transmission lines
- 详细技术说明
- None
- *Abstract
-
Problem:Current methods to fabricate normally-off devices are vulnerable to gate leakage and poor electron transport due to the ultra thin barrier requirement and/or the degraded performance due to fluorine atom contamination or RIE induced damage.Technology:These inventions relate to a new kind of normally-off nitride-based transistor GaN-spacer MOSFET which combines high conductivity in the access regions of the transistor with an enhancement-mode intrinsic transistor. The new normally-off dual-gate GaN transistors are based on the idea of combining a normally-off transistor with low breakdown voltage, with a high breakdown voltage normally-on GaN HEMTs. The GaN HEMT can be either AlGaN/GaN HEMT or AlInN/GaN HEMT, or any other nitride-based device. It should be noted that this invention can also be used for Si, diamond and SiC-based power transistors as it is independent of the specific semiconductor material used.
- 国家/地区
- 美国
欲了解更多信息，请点击 这里
