Media.Player

New Structure and Technology for Power Semiconductor Devices

技术优势

-Reduced off-state leakage current-Improved performance of normally-off nitride based transistors-Reduced on-resistance and increased current density

技术应用

Power electronics, power amplification, and digital electronics

详细技术说明

None

*Abstract

Problem: Current nitride-based transistors suffer from buffer leakage current and low performance of the normally-off nitride-based transistors.Technology: This invention describes a new nitride-based transistor which has a 3-D trench structure between the Source and Drain contacts and a conductive electrode covering at least some portions of the top and sidewalls of the 3D trenches. High performance normally-off nitride transistors can be fabricated with the combination of the trench-structure and a normally-off gate region.

*Principal Investigation

Name: Bin Lu, Graduate Student

Department: Electrical Engineering and Computer Science

Name: Elison Matioli, Graduate Student

Department: Electrical Engineering and Computer Science

Name: Tomas Palacios, Associate Professor

Department: Electrical Engineering and Computer Science

主要类别

电子

细分类别

半导体

国家/地区

美国