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Ultrahigh Density Patterning of Conducting Media

详细技术说明

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*Abstract

A method is described for using an oxide heterostructure (for example, LaAlO3/SrTiO3) as a nanoelectronic sketchpad, suitable for ultra-high-density lithographic patterning of a quasi-two-dimensional electron gas (q-2DEG). The polar discontinuity at the oxide interface produces a built-in electric field that can exceed the breakdown voltage in the polar oxide (e.g., LaAlO3), leading to an accumulation of conduction electrons at the interface. If one applies an electric field across the polar oxide, it is possible to induce a insulator-metal transition at the interface.By applying localized electric fields, it is possible to create localized conducting regions that can be useful for ultra-high-density storage and information processing, both classical and quantum. The small size of the regions makes it conceivable that single-electron transistors (SETs) could be created. SETs are useful because they are sensitive charge sensors, and that sensitivity could be used for a wide range of agent and bio-detection applications. The possibility also exists of making these oxides compatible, through existing and established growth techniques, with silicon. These conducting regions could be very useful in nanoscale silicon device technology.Applications:1) Ultra-high density storage2) Reconfigurable nanoelectronics3) Passive/active "on-the-fly" circuitry4) Agent and/or bio-sensing5) Gate for quantum computing devices6) Single-electron transistorsAdvantages:1) New method for creating nanoscale conducting regions below the surface of a material2) Density for storage is more than 10 times higher than reported for existing technology3) Nanoscale wires can easily be created without photoresistance4) Can also be erased5) Except for power, essentially all functions for information processing can be created on a single platform at the nanoscale levelPatent Allowed

*Principal Investigation

Name: Jeremy Levy, Professor

Department: Distinguished Faculty-Dietrich School of Arts and Sciences

国家/地区

美国