A CHEMICAL VAPOUR DEPOSITION SYSTEM AND PROCESS
- 总结
- The present invention relates to a chemical vapour deposition (CVD) system and process, and in particular to a system and process for depositing semiconductors such as silicon carbide.
- 技术优势
- A novel approach to the deposition of Silicon Carbide on an inexpensive substrate (Silicon).
- 技术应用
- Semiconductor Manufacturing
- 详细技术说明
- A chemical vapour deposition system, including: a process tube for receiving at least one sample, the process tube being constructed of silicon carbide, impregnated with silicon, and coated with silicon carbide; a pumping system to evacuate the process tube to high vacuum; one or more gas inlets for introducing one or more process gases into the evacuated process tube; and a heater to heat the process tube and thereby heat the one or more process gases and the at least one sample within the process tube to cause a material to be deposited onto the at least one sample within the process tube by chemical vapour deposition.
- 合作类型
- Licensing
- 申请日期
- 12/02/2010 00:00:00
- 申请号码
- AU2010213363
CN201080007530.9
JP2011-549395
KR10-2011-7018726
MYPI2011003565
US13/148942
- 国家/地区
- 澳洲
欲了解更多信息，请点击 这里
