Methods for Manufacturing Metal Oxide Nanowires
Metal oxide nanowires are being investigated to make nanodevices and nanosensors. High operation temperatures or vacuum is required in the manufacturing of metal oxide nanowires by existing vapor phase evaporation methods. This invention provides a method of manufacturing metal oxide nanowires by first providing a metal to form a non-linear substantially planar structure defining a surface. The metal is then heated and maintained at a temperature from 300 to 800° C., and then exposed to oxygen and water vapor containing air stream for a sufficient period of time to form the metal oxide nanowires. The oxygen containing air stream flows in a direction substantially parallel to the plane of the structure. Relatively low temperatures may be used and no vacuum is required in this method, thereby reducing the overall manufacturing costs. Further, this method is able to manufacture different densities of the metal oxide nanowires simultaneously.
Inventor: Xu, Chunhua | Shi, San-Qiang | Liu, Yang | Woo, Chung Ho
Priority Number: US7410912B2
IPC Current: H01L002131 | H01L0021469
US Class: 438773 | 977762 | 977811
Assignee Applicant: The Hong Kong Polytechnic University
Title: Methods of manufacturing metal oxide nanowires
Usefulness: Methods of manufacturing metal oxide nanowires
Summary: For manufacturing metal oxide nanowires investigated to make nanodevices and nanosensors.
Novelty: Metal oxide nanowires manufacture by providing elongate metal component(s) in form defining planar surface, heating and maintaining metal at specified temperature, and exposing metal to oxygen and water vapor containing air stream
化工/材料
化工/材料应用
SHI San-qiang
XU Chun-hua
LIU Yang
WOO Chung-ho
美国
