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高分子碳化多孔基質、其制法及應用

总结

Faced with the problem of the present invention: For the catalyst carrier, not only requires a proper specific surface area and pore size distribution, but also to support the mechanical strength and thermal stability is also very strict requirements. Furthermore, the catalytic composition and properties of the support surface is directly related to the corresponding parameters of the catalyst performance is important. Widely used for catalyst carrier, it is difficult at the same time with the above requirements. Solving means of the present invention is based on vinylidene chloride and acrylonitrile copolymer material microspheroidal. The copolymer is formed by a Class lysis huge surface area, good thermal stability, excellent mechanical strength and uniformity of pore size distribution of the new carbon matrix material. Gas chromatography of the substrate as a filler, a smooth separation of various gases; as a carrier with a transition metal or rare earth metal to form a variety of different properties of the catalysts.

附加资料

Inventor: Ramos, Henry J.
Priority Number: US7438955B2
IPC Current: B23B002714 | H05H000124 | C23C001406 | C23C001432 | C23C001435 | H01L002128 | H01L0021285 | C23C001400 | C23C001600
US Class: 427569 | 20419212 | 20419216 | 4272481 | 427250 | 42725523 | 427576
Assignee Applicant: Philippine Council for Advanced Science and Technology Research and Development,Metro Manila,PH | University of the Philippines Diliman,Quezon City,PH
Title: Titanium nitride thin film formation on metal substrate by chemical vapor deposition in a magnetized sheet plasma source
Usefulness: Titanium nitride thin film formation on metal substrate by chemical vapor deposition in a magnetized sheet plasma source
Summary: For processing a metal substrate such as stainless steel or copper, e.g. for diffraction barriers in large scale integrated circuits, or wear-resistant coating on tools.
Novelty: Processing of metal substrate, e.g. stainless steel, involves putting rare earth metal target, discharge gas, and reactive gas, in chamber containing the substrate, and producing mixed species plasma on the chamber

主要类别

电子

细分类别

半导体

其他

CHAN S.C.Albert
YUAN Guo-qing

国家/地区

中国内地