Metal Nanoparticle Monolayer
Flash memories have attracted considerable attention as promising next-generation nonvolatile memories owing to their higher chip density, multi-bit per cell storage properties, and compatibility with the current complementary metal-oxide-semiconductor process. To facilitate information storage, nanocrystals floating gate is adopted to replace the planar floating gate. Gold nanoparticles are appropriate material to serve as floating gate due to their chemical stability. The researchers have developed a simple approach to prepare microcontact printable gold nanoparticles charge trapping layer with ultrahigh density for the appreciation in flash memories on the flexible polyethylene terephthalate substrate.
- For manufacturing of flash memories
香港
