Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and SystemsAlGaN/GaN 增強型異質結場效應晶體管的製備
III-nitride compound semiconductors have the merits of wide band gap, high breakdown field, and large thermal conductivity, which results in well designed AlGaN/GaN heterojunction field-effect transistors. This transistor is capable of high temperature operation, suitable for high temperature integrated circuits. In the direct-coupled FET logic (DCFL), enhancement-mode HFETs are used as the drives while the depletion-mode HFETs are used as the load. In order to implement DCFL integrated circuits, a technology for monolithic initegration of enhancement-mode and depletion-mode (E/D) HFETs is needed.
This invention discloses a method of fabricating enhancement-mode AlGaN/GaN HFETs using fluoride-based plasma treatment and post-gate annealing.
It is effective and highly reproducible for fabricating self-aligned E-mode AlGaN/GaN HFETs. With the use of fluorine ions, which have strong electronegativity, it reduces treatment or implantation induced damages while maintaining stability.
This invention can be applicable in Single supply voltage RF/microwave integrated circuits like low-noise amplifiers, oscillators, mixers, and power amplifiers as well as in GaN-based digital ICs for high temperature electronics, which are demanded by automotive and aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.
1. A strictly self-aligned approach
2. No additional photolithography: cost saving
3. Additional reduction of gate leakage current: wider operating range, no need for level shifting
4. Excellent cross-sample uniformity
- Single supply voltage RF/microwave integrated circuits: low-noise amplifiers, oscillators, mixers, and
power amplifiers
- GaN-based digital ICs for high temperature electronics, which are demanded by automotive and
aerospace applications, chemical reactor controllers, and oil-drilling equipment, etc.
Patent Number: CN101359686B
Application Number: CN200810145148A
Inventor: CHEN, Jing
Priority Date: 3 Aug 2007
Priority Number: CN101359686B
Application Date: 4 Aug 2008
Publication Date: 2 Jan 2013
IPC Current: H01L0029772 | H01L002128 | H01L0021335 | H01L0029423 | H01L0029778 | H01L002978
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Reliable normally-off iii-nitride active device structures, and related methods and systems | The reliable normally closed III-nitride active device structure and related method and system
Usefulness: Reliable normally-off iii-nitride active device structures, and related methods and systems | The reliable normally closed III-nitride active device structure and related method and system
Summary: Used as a field-effect transistor.
Novelty: Field-effect transistor comprises a first gate, a second gate arranged at a fixed potential in a cascode configuration, and a semiconductor channel having an enhancement mode portion and a depletion mode portion
电子
半导体
4 Aug 2008
Chinese 200810145148.9
Chinese ZL200810145148.9
TTC.PA.265
香港
