Media.Player

Method of Forming Polycrystalline Silicon Thin Film, and Polycrystalline Silicon and Thin Film Transitor Famed by the Method使用固體激光器退火的多晶矽薄膜製備半導體器件的方法

总结

Thin-film transistors (TFTs) are used in the construction of active-matrix devices like liquid-crystal displays (LCDs), organic light emitting diode (OLED) displays, and image sensors. TFTs based on amorphous silicon suffer from low operating speed and lack of a p-type device, making it difficult to realize peripheral circuits. There has therefore been a move to polycrystalline silicon devices, which can be obtained from amorphous silicon by furnace or laser-induced heating.

This invention introduces a technique of forming polycrystalline silicon thin films by combining the processes of crystallization of amorphous silicon and laser based annealing. The resulting quality of the films is good, uniform and reproducible. Semiconductor devices can be built on the films with a low temperature. As a result, the cost of lasers used in the process is typically low.

The resulting polycrystalline silicon can be used in a variety of applications, including but not limited to sensors, electronic devices, flat-panel displays and 3-dimensional integrated circuits (ICs).

技术优势

1. Higher quality
2. Higher uniformity and reproducibility
3. Lower manufacturing cost
4. Reduction in material micro-defects
5. Resulting silicon can be used in a wide variety of applications

技术应用

- Amorphous silicon based thin-film transistors for flat-panel liquid-crystal displays
- Polycrystalline silicon based thin-film transistors for higher information - content displays
- 3-dimensional integrated circuits
- Sensors
- Electronic devices

附加资料

Patent Number: CN1975989B
Application Number: CN200610139877A
Inventor: Man Wong | Hoi S. Kwok | Zhiguo Meng
Priority Date: 1 Dec 2005
Priority Number: CN1975989B
Application Date: 20 Sep 2006
Publication Date: 29 Sep 2010
IPC Current: H01L002120 | H01L0021336
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Polycrystalline silicon film preparation method, polycrystalline silicon and film transistor prepared therefor | And polysilicon film transistor preparing method of polycrystalline silicon thin films which are prepared by the method
Usefulness: Polycrystalline silicon film preparation method, polycrystalline silicon and film transistor prepared therefor | And polysilicon film transistor preparing method of polycrystalline silicon thin films which are prepared by the method
Summary: Used for forming polycrystalline silicon that is utilized during fabrication of a semiconductor device.
Novelty: Polycrystalline silicon forming method for semiconductor device, involves annealing amorphous silicon`s layer and metal`s layer to form polycrystalline silicon layer that is irradiated with two different harmonics of pulsed laser

主要类别

电子

细分类别

半导体

申请日期

20 Sep 2006

申请号码

Chinese 200610139877.4

专利信息

Chinese ZL200610139877.4

ID号码

TTC.PA.240S

国家/地区

香港