Media.Player

Method for Fabrication of Active-Matrix Display Panels有源矩陣顯示基板製備技術

总结

The demand for high quality and high information content liquid crystal display (LCD) and Organic Light-Emitting Diode (OLED) display has been driving the switch from passive to active matrix (AM) panels. For small size, high information-content, high functional integration and low-power consumption displays, it is recognized that poly-Si based, rather than a-Si based transistors must be used. Since manufacturing cost of an active-matrix panel is directly proportional to the number of masking steps required, there are numerous steps of producing conventional active-matrix display panel, the cost is quite high.

This invention is about a combination of techniques for using less number of steps to fabricate the active-matrix display panels. It includes (1) employing the technique of replacing poly-Si with aluminum to achieve low-resistance metal interconnection and high performance TFTs with low source/drain parasitic resistance; (2) employing poly-Si as pixel electrodes for AMLCD and AMOLED. Through combining the techniques listed above, the deposition and patterning of ITO layer can be eliminated. Compared to the conventional poly-Si and a-Si TFT display panel technologies, at least 2-3 masks can be reduced by the formation of low resistance two-level metal interconnections from one metal layer, 3-mask poly-Si TFTs and poly-Si pixel electrodes. Therefore, a very simple system-on-panel active-matrix display panel fabrication process is developed.

This invention can be commonly used in system-on-panel AMLCD and AMOLED displays.

技术优势

1. Reduced manufacturing cost
2. Higher manufacturing yield
3. Simpler fabrication process

技术应用

- System-on-panel AMLCD and AMOLED displays

附加资料

Patent Number: CN101145564B
Application Number: CN200610163748A
Inventor: GUO, Hai-cheng | MENG, Zhi-guo | WANG, Wen | SUN, Jia-xin | ZHANG, Dong-li | ZHU, Xiu-ling
Priority Date: 25 Nov 2005
Priority Number: CN101145564B
Application Date: 24 Nov 2006
Publication Date: 29 Aug 2012
IPC Current: H01L002712 | H01L002128 | H01L0021336 | H01L0021768 | H01L002184 | H01L0023532 | H01L002943 | H01L0029786
Assignee Applicant: The Hong Kong University of Science & Technology
Title: Active matrix display base plate preparing method | Active matrix display substrate producing method
Usefulness: Active matrix display base plate preparing method | Active matrix display substrate producing method
Summary: Active matrix thin film transistor array for use in LCD and organic LED display (both claimed).
Novelty: Active matrix thin film transistor array for use in LCD, has array with thin film transistors comprising pixel electrodes made of polycrystalline silicon, and source, drain and gate electrodes made of specific metal

主要类别

电子

细分类别

半导体

申请日期

24 Nov 2006

申请号码

Chinese 200610163748.9

专利信息

Chinese ZL200610163748.9

ID号码

TTC.PA.278S

国家/地区

香港